221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron. com e-mail address - sales@sensitron.com t sensitron semiconductor standard low cost hermetic mosfet modules features: high power density low drain to source resistance (r ds(on) ) low thermal resistance (r q jc ) industrial mosfet product map i d (amps) config- uration v dss (v) 25 50 100 200 60 - - - lpm2m200-006 lpm2m250-006 100 - - lpm2m150-010 lpm2m200-010 300 - - lpm2m080-030 LPM2M120-030 - 600 - lpm2m040-060 lpm2m060-060 - - half- bridge 1000 lpm2m025-100 lpm2m035-100 - - - 60 - - lpm4m130-006 - 100 - - lpm4m130-010 - 300 - - lpm4m080-030 - 600 - lpm4m040-060 - - h-bridge 1000 lpm4m024-100 - - - lpmxmxxx-xxx
221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron. com e-mail address - sales@sensitron.com standard low-cost hermetic mosfet modules half-bridge devices ( 1) mosfet characteristics part number v dss volts continuous drain current i d @ tc=25 o c amps pulsed drain current t c =25 o c amps r ds (on) @i d w a c iss typ nf t rr max 25 o c ns maximum p d @ t c =25 o c watts r q jc o c/w lpm2m200-006 60 200 500 0.005 40 9 60 460 0.27 lpm2m250-006 60 250 600 0.004 60 14 60 600 0.20 lpm2m150-010 100 150 400 0.013 40 9 200 600 0.20 lpm2m200-010 100 200 500 0.009 60 14 200 900 0.13 lpm2m080-030 300 80 250 0.055 40 9 200 600 0.20 LPM2M120-030 300 120 350 0.035 60 14 200 900 0.13 lpm2m040-060 600 40 150 0.180 20 9 250 600 0.20 lpm2m060-060 600 60 200 0.120 30 14 250 900 0.13 lpm2m025-100 1000 25 75 0.55 10 9 250 600 0.20 lpm2m035-100 1000 35 120 0.37 15 14 250 900 0.13 h-bridge devices ( 1) mosfet characteristics part number v dss volts continuous drain current i c @ tc=25 o c amps pulsed drain current t c =25 o c amps r ds (on) @i d w a c iss typ nf t rr max 25 o c ns maximum p d @ t c =25 o c watts r q jc o c/w lpm4m130-006 60 130 400 0.006 20 6 60 230 0.56 lpm4m130-010 100 130 400 0.011 20 9 200 600 0.20 lpm4m080-030 300 80 300 0.053 20 9 200 600 0.20 lpm4m040-060 600 40 120 0.180 20 9 250 900 0.20 lpm4m024-100 1000 24 70 0.55 15 9 250 600 0.20 notes: 1- contact sensitron for your custom requirements. mosfet module features: sensitron low-cost hermetic package. low r dson mosfet devices. fast reverse recovery intrinsic rectifier. dbc aln substrate on copper base-plate. pin-to-case voltage isolation up to 2500v. rating up to 60v, 250a; 600v, 100a; 1000v, 50a. half-bridge and h-bridge configurations. unit price: starting at $165 per 100 pcs.
221 west industry court deer park, ny 11729-4681 phone (631) 586-7600 fax (631) 242-9798 world wide web site - http://www.sensitron. com e-mail address - sales@sensitron.com schematic diagrams package outline (a) half-bridge igbt device (b) h-bridge igbt device pin 11 pin 1 pin 5 pin 7 pins 2, 3 pin 4 pin 9 (a) half-bridge mosfet device (b) h-bridge mosfet device pin 1 pin 11 pin 1 pin 5 pin 7 pins 2, 3 pin 4 pin 9 pin 11 pin 9 pin3 pin 2 pin 5 pin 7 pin 10 pin 6 pin 8 pin 4 pin 11 pin 9 pin 1 pin3 pin 2 pin 5 pin 7 pin 10 pin 6 pin 8 pin 4 all dimensions are in inches 9 0.32 0.34 0.23 1.50 0.65 0.65 2.60 0.32 0.75 0.23 0.10 0.40 3.62 power terminals signal 11 terminals 1 2 9 3 7 8 6 5 power pins signal pins copper base 4 10 0.27 f = 0.05 f = 0.10 f = 0.20
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